Vishay Siliconix SI5915BDC-T1-GE3 IGBT Module

Manufacturer Part Number: SI5915BDC-T1-GE3Part Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPackage Description: SMALL OUTLINE, R-XDSO-C8Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.75Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 8 VDrain Current-Max (ID): 4 ADrain-source On Resistance-Max: 0.07 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XDSO-C8Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: P-CHANNELPulsed Drain Current-Max (IDM): 10 AQualification Status: Not QualifiedSurface Mount: YESTerminal Form: C BENDTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 4A I(D), 8V, 0.07ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8