Vishay Siliconix SI7909DN-T1-GE3 IGBT Module

Manufacturer Part Number: SI7909DN-T1-GE3Part Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPackage Description: SMALL OUTLINE, S-XDSO-C6Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.72Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 12 VDrain Current-Max (ID): 5.3 ADrain-source On Resistance-Max: 0.037 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-XDSO-C6Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: UNSPECIFIEDPackage Shape: SQUAREPackage Style: SMALL OUTLINEPolarity/Channel Type: P-CHANNELPulsed Drain Current-Max (IDM): 20 AQualification Status: Not QualifiedSurface Mount: YESTerminal Form: C BENDTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 5.3A I(D), 12V, 0.037ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8