Vishay Siliconix SIA915DJ-T1-GE3 IGBT Module

Manufacturer Part Number: SIA915DJ-T1-GE3Part Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SC-70Package Description: SMALL OUTLINE, S-PDSO-N6Pin Count: 6ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.82Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 4.5 ADrain Current-Max (ID): 4.5 ADrain-source On Resistance-Max: 0.087 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-PDSO-N6Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 6.5 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Form: NO LEADTerminal Position: DUALTime SiA915DJ Dual P-Channel 30 V (D-S) MOSFET