#Vishay Siliconix, #SIZ340DT_T1_GE3, #IGBT_Module, #IGBT, SIZ340DT-T1-GE3 Power Field-Effect Transistor; SIZ340DT-T1-GE3
Manufacturer Part Number: SIZ340DT-T1-GE3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: SMALL OUTLINE, S-PDSO-N8ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 1.7Avalanche Energy Rating (Eas): 5 mJCase Connection: DRAIN SOURCEConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 26.5 ADrain-source On Resistance-Max: 0.0095 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-PDSO-N8Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Min: -55 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 100 ASurface Mount: YESTerminal Form: NO LEADTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor