Vishay Siliconix SIZ728DT-T1-GE3 IGBT Module

Manufacturer Part Number: SIZ728DT-T1-GE3Part Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPackage Description: SMALL OUTLINE, R-PDSO-C6Pin Count: 6ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 7.85Avalanche Energy Rating (Eas): 16 mJCase Connection: DRAIN SOURCEConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 25 VDrain Current-Max (Abs) (ID): 35 ADrain Current-Max (ID): 16 ADrain-source On Resistance-Max: 0.0077 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-C6Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 48 WPulsed Drain Current-Max (IDM): 70 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: C BENDTerminal Position: DUALTime TRANSISTOR 16 A, 25 V, 0.0077 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR-6, FET General Purpose Power