Semikron SK60GB123 IGBT Module

SK60GB123 Features

.Compact design

.One screw mounting

.Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB)

.High short circuit capability

.Low tail current with low temperature dependence

Typical Applications*

.Switching(not for linear use)

.Inverter

.Switched mode power supplies

.UPS

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:40A

Collector current Icp:100A

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

TRANSISTOR IGBT POWER MODULE HALF BRIDGE 1.2kV V(BR)CES 40A I(C)