Semikron SKD100GAL123D IGBT Module

Features

Round main terminals (2 mm ∅)

• Easy drilling of PCB

• Input diodes glass passivated

• 1400 V PIV

• High I2

t rating (inrush current)

• IGBT is latch-up free, homogeneous NPT silicon-structure

• High short circuit capability,

self limiting to 6 * Icnom

• Fast & soft CAL diodes8)

• Isolated copper baseplate using

DCB Direct Copper Bonding

Technology

• Large clearance (9 mm) and

creepage distances (13 mm).

Typical Applications:

Input rectifier bridge (B6U) with

brake chopper for PWM inverter

drives using SEMITRANS

SKM 75GD123D

1) Tcase = 25 °C, unless otherwise

specified 2) IF = – IC, VR = 600 V,

– diF/dt = 800 A/µs, VGE = 0 V

3) Use VGEoff = -5 ... - 15 V

8) CAL = Controlled Axial Lifetime

Technology.

Junction Temperature Tj 150 °C

Storage Temperature Tstg -40 to 125 °C

Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts

Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts

Collector Current (Tc = 25°C) IC 90 Amperes

Peak Collector Current (Tj ≤ 150°C) ICM 200 Amperes

Peak Emitter Current** IEM 800* Amperes

Maximum Collector Dissipation (Tc = 25°C) Pc 690 Watts

IGBT Modules SKD100GAL123D Input bridge B6U with brake chopper 1200V/100-200A/690W