Semikron SKiiP32NAB12T10 IGBT Module

Features

• N Channel, enhancement mode

• Short internal connections avoid oscillations

.also available with powerfull chopper. For characteristics please refer to Inverter IGBT

1)Theatsink=25°C, unless otherwise specified

2)CAL=Controlled Axial Lifetime Technology(soft and fast recovery)

.For diagrams of the Chopper IGBT please fefer to SKiiP30NAB12T10

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:65A

Collector current Icp:130A

Collector power dissipation Pc:180W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

3-phase bridge rectifier + braking chopper + 3-phase bridge inverter