Semikron SKIIP83AHB15T1 IGBT Module

SKIIP83AHB15T1

Features

.High level power integration

.Two screws mountiong to the customer heatsink ,compactdesign

.Low thermal impedance due to durable ceramic insulation

.Pressure contact technology with simple connection to DCB through pressure contact (no soldering)and with increased power cycling capability

.High power density.Low losses

.Integrated temperature sensor

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage VRRM:1500V

Gate-Emitter voltage VGES:±20V

Collector current Ic:65A

Collector current Icp:95A

Collector-Emitter voltage VCES:1200V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Diode IGBT; 3-Phase Bridge/Braking Chopper; M8a.