Semikron SKIM601TML12E4B IGBT Module

SKiM601TMLI12E4B

Features

●IGBT 4 Trench Gate Technology

●Solder technology

●VCE(sa) with positive temperature coefficient

●Low inductance case

●Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate

●Pressure contact technology for thermal contacts

●Spring contact system to attach driver PCB to the control terminals

●High short circuit capability, self limiting to6x Ic

●Integrated temperature sensor

Remarks*

●Case temperature limitedtoTs = 125°C max; Te = Ts (for baseplateless modules)

●Recommended Top = -40...150°C

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :600A

Collector current Icp 1ms Tc=25°C :1800A

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C