Sell SKKH 570/18 E, #Semikron #SKKH 570/18 E Stock, The SKKH 570/18 E is a specific model of thyristor/diode module 1800V and 570A, #IGBT_Module, #IGBT, #SKKH_570_18_E
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https://www.slw-ele.com/skkh570-18e.html
SKKH570/18 E, SKKH570/18E, SKKH570-18E Features
. Heat transfer through aluminium nitride ceramic isolated metal baseplate
. Precious metal pressure contacts for high reliability
. Thyristor with amplifying gate
Typical Applications*
. AC motor softstarters
. Input converters for AC inverter drives
. DC motor control (e.g. for machine tools)
. Temperature control (e.g. for ovens,chemical processes)
. Professionals light dimming (studios,theaters)
T(AV) sinus 180°: This refers to the average forward voltage drop in the device when operating with a sinusoidal waveform at 180 degrees of conduction angle. This voltage drop is typically specified at a certain current rating and temperature.Tc = 85 °C 570 A: This indicates the device's maximum continuous current rating (570 A) when the case temperature (Tc) is maintained at 85 °C.Tc = 100 °C 435 A: Similar to the previous point, this indicates the maximum continuous current rating (435 A) when the case temperature is increased to 100 °C.ITRMS continuous operation 1000 A: This specifies the maximum continuous root mean square (RMS) current that the device can handle during continuous operation.ITSM 10 ms: This refers to the maximum non-repetitive surge current the device can withstand for a duration of 10 milliseconds.Tj = 25 °C 19000 A: This specifies the maximum junction temperature (Tj) of the device when operated at 25 °C, and the maximum current that can be handled under these conditions.Tj = 135 °C 15500 A: Similar to the previous point, but for a higher junction temperature of 135 °C.i²t 10 ms: This specifies the energy handling capability of the device in terms of current squared times time (i²t) for a 10 ms time period. It is related to the device's ability to withstand short-duration overcurrent events.Tj = 25 °C 1805000 A²s: This represents the cumulative energy handling capability (in A²s) of the device at a junction temperature of 25 °C. It's related to the device's ability to handle long-duration overcurrent events.Tj = 135 °C 1201250 A²s: Similar to the previous point, but for a higher junction temperature of 135 °C.VRSM 1900 V: This specifies the maximum reverse voltage (VRSM) that the device can withstand in a non-repetitive surge condition.VRRM 1800 V: This specifies the maximum repetitive reverse voltage (VRRM) that the device can withstand.VDRM 1800 V: This specifies the maximum reverse voltage (VDRM) that the device can block in a non-conductive state.(di/dt)cr Tj = 135 °C 250 A/µs: This indicates the critical rate of rise of current (di/dt) that the device can handle at a junction temperature of 135 °C without triggering unintended conduction.(dv/dt)cr Tj = 135 °C 1000 V/µs: This specifies the critical rate of rise of voltage (dv/dt) that the device can withstand at a junction temperature of 135 °C without triggering unintended conduction.Tj -40 ... 135 °C: This specifies the allowable operating junction temperature range for the device, from -40 °C to 135 °C.Module: This indicates that the device is a module, which typically contains multiple semiconductor components within a single package.Tstg -40 ... 125 °C: This specifies the storage temperature range for the device, from -40 °C to 125 °C.Visol a.c.; 50 Hz; r.m.s.:- 1 min 3000 V: This indicates the maximum isolation voltage (Visol) that the device can withstand for 1 minute at a 50 Hz alternating current (a.c.) frequency.
- 1 s 3600 V: Similar to the previous point, but for a shorter duration of 1 second.
