Semikron SKM100GB125D IGBT Module

Features

• Nchannel, homogeneous Si
• Low inductance case
• Short tail current with low temperature dependence
• High short circuit capability, self limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• lsolated copper baseplate using DCB Direct Copper Bonding Technology
• Large clearance (10 mm) and creepage distances (20 mm)

Typical Applications*

• Switched mode power supplies at fw> 20 kHz
• Resonant inverters up to 100 kHz
• Inductive heating
• Electronic welders atfw > 20 kHz

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :100A

Collector current Icp 1ms Tc=25°C :200A

Collector power dissipation Pc:1800W

Isolation Voltage VIsol (AC 1 minute) :4000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2.5 ~5 N·m

Weight 160 g