Semikron SKM150GB12V IGBT Module

Features

• V-IGBT = 6. Generation Trench V-IGBT

• CAL4 = Soft switching 4. Generation CAL-diode

• Insulated copper baseplate using DBC technology (Direct Copper Bonding)

• Increased power cycling capability

• With integrated gate resistor

• UL recognized, file no. E63532

• Lowest switching losses at High di/dt

Typical Applications*

• AC inverter drives

• UPS

• Electronic welders Remarks

• Case temperature limited to Tc = 125°C max.

• Recommended Top = -40 ... +150°C

• Product reliability results valid for Tj = 150°C

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=80°C :231A

Collector current Icp 1ms Tc=80°C :450A

Isolation Voltage VIsol (AC 1 minute) :4000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting  M5 screw torque 2.5~5 Nm

Mounting to heat sink M6 3~5 Nm

Weight 160g