Semikron SKM200GAL126D IGBT Module

SKM200GAL126D Features:

.Homogeneous Si

.Trench=Trenchgate technology

.V CE(sat) with positive temperature coefficient

.High short circuit capability, self limiting to 6 x Icnom

.Fast & soft inverse CAL diodes

.Large clearance (10 mm) and creepage distances (20 mm) Isolated copper baseplate using DBC .Technology (Direct Copper Bonding) UL recognized, file no.

Typical Applications:

.electronic welders

.DC/DC - converter

.Brake chopper

.Switched reluctance motor

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:260A

Collector current Icp:300A

Collector-Emitter voltage VCES:4000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

IGBT Module 1.7kv 220a Semitrans 3