#SEMIKRON, #SKM200GB121D, #IGBT_Module, #IGBT, SKM200GB121D Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,; SKM200GB121D
Manufacturer Part Number: SKM200GB121DPart Life Cycle Code: ObsoleteIhs Manufacturer: Semikron INTERNATIONALPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: SEMIKRONRisk Rank: 5.83Case Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 2500 WPower Dissipation-Max (Abs): 1250 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1100 nsTurn-on Time-Nom (ton): 190 nsVCEsat-Max: 4 V Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,