Semikron SKM200GB12T4 IGBT Module

Features

• IGBT4 = 4. generation fast trench IGBT (Infineon)

• CAL4 = Soft switching 4. generation CAL-diode

• Isolated copper baseplate using DBC technology (Direct Bonded Copper)

• Increased power cycling capability

• With integrated gate resistor

• For higher switching frequenzies up to 20kHz

• UL recognized, file no. E63532

Typical Applications*

• AC inverter drives

• UPS

• electronic welders at fsw up to 20 kHz

Remarks

• Case temperature limited

to Tc = 125°C max.

• Recommended Top = -40 ... +150°C

• Product reliabili

IGBT:

• VCES (Collector-Emitter Voltage) at Tj = 25 °C: 1200 V
• IC (Collector Current):

  • at Tj = 175 °C, Tc = 25 °C: 313 A
  • at Tj = 175 °C, Tc = 80 °C: 241 A

• ICnom (Nominal Collector Current): 200 A
• ICRM (Repetitive Peak Collector Current): 3xICnom, 600 A
• VGES (Gate-Emitter Voltage): -20 ... 20 V
• tpsc (Short Circuit Withstand Time):

  • VCC = 800 V
  • VGE ≤ 15 V
  • VCES ≤ 1200 V
  • Tj = 150 °C: 10 µs
  • Tj: -40 ... 175 °C

Inverse Diode:

• IF (Forward Current):

  • at Tj = 175 °C, Tc = 25 °C: 229 A
  • at Tj = 175 °C, Tc = 80 °C: 172 A

• IFnom (Nominal Forward Current): 200 A
• IFRM (Repetitive Peak Forward Current): 3xIFnom, 600 A
• IFSM (Non-Repetitive Surge Current) tp = 10 ms, sin 180°, Tj = 25 °C: 990 A
• Tj: -40 ... 175 °C

Module:

• It(RMS) (RMS Terminal Current) at Tterminal = 80 °C: 500 A
• Tstg (Storage Temperature): -40 ... 125 °C
• Visol (Isolation Voltage) AC sinus 50 Hz, t = 1 min: 4000 V

Semikron Made SKM200GB12T4 IGBT