Semikron SKM400GB125D IGBT Module

SKM400GB125D Features:

Low inductance case

Short tail current with low temperature dependence

High short Circuit capability, self limiting to 6 x I cnom

Fast & soft inverse CAL diodes

Isolated copper baseplate using DBC Direct Copper Bonding Technology

Large clearance (13 mm) and creepage distances (20 mm)

Typical Applications:

Switched mode power supplies at  f sw  > 20kHz

Resonant inverters up to 100 kHz Inductive heating

Electronic welders at f sw > 20 kHz SKM400GB125D

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:400A

Collector current Icp:800A

Collector power dissipation Pc:1270W

Collector-Emitter voltage VCES:4000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

Weight 325g

IGBT Array & Module Transistor Dual N Channel 400 A 3.3 V 1200V Module