Semikron SKM400GB126D IGBT Module

IGBT Module; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:470A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Package/Case:SEMITRANS 3; Collector Emitter Voltage, V(br)ceo:1200V ;RoHS Compliant: Yes SKM400GB126D  Features: .Homogeneous Si .Trench=Trenchgate technology .Vce(sat) with positive temperature coefficient .High short cirauit capability,self limiting to 6xIc Typical Applications .SC inverter drives .UPS .Electronic welders Maximum ratings and characteristics  .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1200V Gate-Emitter voltage VGES:±20V Collector current Ic:330A Collector current Icp:960A Collector-Emitter voltage VCES:4000V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C   IGBT module dual SKM400GB126D 470A 1200V