#SEMIKRON, #SKM50GAL121D, #IGBT_Module, #IGBT, SKM50GAL121D Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel; SKM50GAL121D
Manufacturer Part Number: SKM50GAL121DPart Life Cycle Code: ObsoleteIhs Manufacturer: Semikron INTERNATIONALPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: SEMIKRONRisk Rank: 5.83Case Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X7Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 400 WPower Dissipation-Max (Abs): 400 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 250 nsTurn-on Time-Nom (ton): 80 nsVCEsat-Max: 3.5 V Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel