#Semikron, #SKT552_16E, #IGBT_Module, #IGBT, SKT552/16E Semikro IGBT-Module 1600V 550A;
SKT 552/16 E
Collector-Emitter voltage Vces:1600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:550A
Collector power dissipation Pc:1270W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m