#ON Semiconductor, #SMUN5113DW1T1G, #IGBT_Module, #IGBT, SMUN5113DW1T1G Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL; SMUN5113DW1T1G
Manufacturer Part Number: SMUN5113DW1T1GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6Manufacturer Package Code: 419B-02ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 1.53Additional Feature: BUILT IN BIAS RESISTANCE RATIO IS 1Collector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 80JESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: PNPPower Dissipation-Max (Abs): 0.385 WReference Standard: AEC-Q101Subcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL