#ST, #STE07DE220, #IGBT_Module, #IGBT, STE07DE220 Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module;
Features
■High voltage / high current cascode configuration
■Ultra low equivalent on resistance
■Very fast-switch, up to 150 kHz
■Ultra low CISS
■Low dynamic VCS(ON)
Applications
■Industrial converters
■WeldingDescriptionThe STE07DE220 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE07DE220 is designed for use in industrial mains flyback converters and/or special applications.
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:2200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:7A
Collector current Icp:14A
Collector power dissipation Pc:220W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m