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Powerex Inc T9G0121003DH IGBT Module

T9G0121003DH

#Powerex Inc, #T9G0121003DH, #IGBT_Module, #IGBT, T9G0121003DH Silicon Controlled Rectifier, 1570A I(T)RMS, 1000000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, T9G, 3

· Categories: IGBT Module
· Manufacturer: Powerex Inc
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 719
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T9G0121003DH Specification

Sell T9G0121003DH, #Powerex Inc #T9G0121003DH Stock, T9G0121003DH Silicon Controlled Rectifier, 1570A I(T)RMS, 1000000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, T9G, 3 PIN; T9G0121003DH, #IGBT_Module, #IGBT, #T9G0121003DH
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/t9g0121003dh.html

Manufacturer Part Number: T9G0121003DHPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Powerex INCPackage Description: T9G, 3 PINPin Count: 3ECCN Code: EAR99HTS Code: 8541.30.00.80Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.58Circuit Commutated Turn-off Time-Nom: 250 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 1000 V/usDC Gate Trigger Current-Max: 200 mADC Gate Trigger Voltage-Max: 3 VJESD-30 Code: O-CEDB-N2Leakage Current-Max: 75 mANon-Repetitive Pk On-state Cur: 17000 ANumber of Elements: 1Number of Terminals: 2On-state Current-Max: 1000000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 1570 ARepetitive Peak Off-state Voltage: 1200 VRepetitive Peak Reverse Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTime Silicon Controlled Rectifier, 1570A I(T)RMS, 1000000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, T9G, 3 PIN

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