Product Tag:
1000v
MDC100-10 Siling Power Diode module IGBT Module 1000V / 100A
QM300HH-2H Mitsubishi transistor modules high power switching use 1000V 300A
QM75DY-2H Mitsubishi HIGH POWER SWITCHING USE INSULATED TYPE 75A 1000V
IXFN44N100Q3 N-Channel Enhancement ModeFast Intrinsic RectifierVDSS=1000V,ID25=38A,RDS(on)≤220mΩ trr≤300ns
MG150N2YS40 150A/1000V/IGBT/2U
Mitsubishi transistor modules medium power switching use insulated type 15A 1000V
2DI200D-100 Power Transistor Module 200A/1000V/GTR/2U
QM100DY-2HBK Mitsubishi IGBT Module 100A 1000V high power switching useinsulated type ;
ESM4016 Semikron IGBT Module 600V / 70A;
QM150DY-2HBK MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE ;
