FF900R17ME7_B11 EconoDUAL™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC 1700V 900A

CM900DXLE-24A MITSUBISHI IGBT MODULES High power switching use 900A 1200V

FF900R12IE4 PrimePACK™ 2 1200 V 900 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4 Emitter Controlled 4 Diode NTC and fast switching chip. Also available with pre-applied Thermal Interface Material

IGBT MODULE (V series)1700V / 900A / 2 in one package

2MBI900VXA-120P-50 IGBT MODULE (V series)1200V / 900A / 2 in one package;

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES

LD431850 Silicon Controlled Rectifier, 900A I(T)RMS, 500000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element, POW-R-BLOK-7

IGBT MODULE (V series)1700V / 450A / 6 in one package

Part Number #SKIM455GD12T4D1 Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1200V Gate-Emitter voltage VGES:±20V Collector current Ic:450A Collector current Icp:900A Collector power dissipation Pc:1270W Collector-Emitter voltage VCES:2500V Operating junction temperature Tj:+150°C Storage […]

Mitsubishi hvigbt modules 900A 4500V high power switching use insulated type