#EUPEC, #TD251N18, #IGBT_Module, #IGBT, TD251N18 Silicon Controlled Rectifier, 410A I(T)RMS, 261000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, MODULE-5; TD2
Manufacturer Part Number: TD251N18KOFPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: MODULE-5Pin Count: 5HTS Code: 8541.30.00.80Manufacturer: Infineon Technologies AGRisk Rank: 5.17Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDC Gate Trigger Current-Max: 200 mADC Gate Trigger Voltage-Max: 2 VDesc. of Quick-Connects: G-GRDesc. of Screw Terminals: A-K-AKHolding Current-Max: 300 mAJESD-30 Code: R-XUFM-X5Leakage Current-Max: 50 mAMoisture Sensitivity Level: 1Non-Repetitive Pk On-state Cur: 9100 ANumber of Elements: 1Number of Terminals: 5On-state Current-Max: 261000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 410 ARepetitive Peak Off-state Voltage: 1800 VRepetitive Peak Reverse Voltage: 1800 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Silicon Controlled Rectifier, 410A I(T)RMS, 261000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, MODULE-5