#MITSUBISHI, #TM200EZ_24, #IGBT_Module, #IGBT, TM200EZ-24 Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,; TM200EZ-24
Manufacturer Part Number: TM200EZ-24Pbfree Code: NoPart Life Cycle Code: Not RecommendedIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X6HTS Code: 8541.30.00.80Manufacturer: Mitsubishi ElectricRisk Rank: 5.78Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN SERIES DIODEDC Gate Trigger Current-Max: 100 mADC Gate Trigger Voltage-Max: 3 VDesc. of Quick-Connects: G-GRDesc. of Screw Terminals: 2A-2CKJESD-30 Code: R-PUFM-X6Leakage Current-Max: 30 mANon-Repetitive Pk On-state Cur: 4000 ANumber of Elements: 1Number of Terminals: 6On-state Current-Max: 200000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 314 ARepetitive Peak Off-state Voltage: 1200 VRepetitive Peak Reverse Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,