#MITSUBISHI, #TM25CZ_H, #IGBT_Module, #IGBT, TM25CZ-H Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element,; TM25CZ-H
Manufacturer Part Number: TM25CZ-HPart Life Cycle Code: Not RecommendedIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X7HTS Code: 8541.30.00.80Manufacturer: Mitsubishi ElectricRisk Rank: 5.72Case Connection: ISOLATEDConfiguration: COMMON CATHODE, 2 ELEMENTSDC Gate Trigger Current-Max: 50 mADC Gate Trigger Voltage-Max: 3 VDesc. of Quick-Connects: 2G-2GRDesc. of Screw Terminals: 2A-CKJESD-30 Code: R-PUFM-X7Leakage Current-Max: 4 mANon-Repetitive Pk On-state Cur: 1000 ANumber of Elements: 2Number of Terminals: 7On-state Current-Max: 25000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTQualification Status: Not QualifiedRMS On-state Current-Max: 39.25 ARepetitive Peak Off-state Voltage: 800 VRepetitive Peak Reverse Voltage: 800 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTrigger Device Type: SCR Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element,