#MITSUBISHI, #TM25DZ_H, #IGBT_Module, #IGBT, TM25DZ-H Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element,; TM25DZ-H
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Mitsubishi #TM25DZ-H
•IT (AV) Average on-state current ............25A
•VRRM Repetitive peak reverse voltage........400/800V
•DOUBLE ARMS
•Insulated Type
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:800V
Gate-Emitter voltage VGES:±20V
Collector current Ic:25A
Collector current Icp:50A
Collector power dissipation Pc:500W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting M5 screw torque 1.96~2.94 N·m
Weight Typical value 160g