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MITSUBISHI TM25EZ-2H IGBT Module

TM25EZ-2H

#MITSUBISHI, #TM25EZ_2H, #IGBT_Module, #IGBT, TM25EZ-2H Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element; TM25EZ-2H

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 11+
. Available Qty: 13
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TM25EZ-2H Specification

Sell TM25EZ-2H, #MITSUBISHI #TM25EZ-2H Stock, TM25EZ-2H Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element; TM25EZ-2H, #IGBT_Module, #IGBT, #TM25EZ_2H
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/tm25ez-2h.html

Manufacturer Part Number: TM25EZ-2HPbfree Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X5HTS Code: 8541.30.00.80Manufacturer: Mitsubishi ElectricRisk Rank: 5.92Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN SERIES DIODEDC Gate Trigger Current-Max: 50 mADC Gate Trigger Voltage-Max: 3 VDesc. of Quick-Connects: G-GRDesc. of Screw Terminals: 2A-CKJESD-30 Code: R-PUFM-X5Leakage Current-Max: 10 mANon-Repetitive Pk On-state Cur: 500 ANumber of Elements: 1Number of Terminals: 5On-state Current-Max: 25000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 39.25 ARepetitive Peak Off-state Voltage: 1600 VRepetitive Peak Reverse Voltage: 1600 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element

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