#MITSUBISHI, #TM55EZ_H, #IGBT_Module, #IGBT, TM55EZ-H Silicon Controlled Rectifier, 86.35A I(T)RMS, 55000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,; TM55EZ-H
Manufacturer Part Number: TM55EZ-HPbfree Code: NoPart Life Cycle Code: Not RecommendedIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X5HTS Code: 8541.30.00.80Manufacturer: Mitsubishi ElectricRisk Rank: 5.78Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN SERIES DIODEDC Gate Trigger Current-Max: 100 mADC Gate Trigger Voltage-Max: 3 VDesc. of Quick-Connects: G-GRDesc. of Screw Terminals: 2A-CKJESD-30 Code: R-PUFM-X5Leakage Current-Max: 10 mANon-Repetitive Pk On-state Cur: 1100 ANumber of Elements: 1Number of Terminals: 5On-state Current-Max: 55000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 86.35 ARepetitive Peak Off-state Voltage: 800 VRepetitive Peak Reverse Voltage: 800 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Silicon Controlled Rectifier, 86.35A I(T)RMS, 55000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,