#EUPEC, #TT251N12, #IGBT_Module, #IGBT, TT251N12 Silicon Controlled Rectifier, 261000mA I(T), 1200V V(RRM); TT251N12
Manufacturer Part Number: TT251N12KOFRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: ,Pin Count: 7ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 2.25DC Gate Trigger Current-Max: 200 mADC Gate Trigger Voltage-Max: 2 VDesc. of Quick-Connects: 2G-2GRDesc. of Screw Terminals: A-K-AKHolding Current-Max: 300 mALeakage Current-Max: 50 mAMoisture Sensitivity Level: 1Non-Repetitive Pk On-state Cur: 9100 AOn-state Current-Max: 261000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPeak Reflow Temperature (Cel): NOT SPECIFIEDRepetitive Peak Reverse Voltage: 1200 VSubcategory: Silicon Controlled RectifiersTime Silicon Controlled Rectifier, 261000mA I(T), 1200V V(RRM)