#Renesas Electronics America, #UPA2791GR_E2_AT, #IGBT_Module, #IGBT, UPA2791GR-E2-AT Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal
Manufacturer Part Number: UPA2791GR-E2-ATPart Life Cycle Code: TransferredIhs Manufacturer: NEC ELECTRONICS AMERICA INCPackage Description: LEAD FREE, SOP-8Manufacturer: NEC Electronics America IncRisk Rank: 5.72Avalanche Energy Rating (Eas): 2.5 mJConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 5 ADrain-source On Resistance-Max: 0.05 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNEL AND P-CHANNELPulsed Drain Current-Max (IDM): 20 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: TINTerminal Form: GULL WINGTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8