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Renesas Electronics America UPA2791GR-E2-AT IGBT Module

UPA2791GR-E2-AT

#Renesas Electronics America, #UPA2791GR_E2_AT, #IGBT_Module, #IGBT, UPA2791GR-E2-AT Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal

· Categories: IGBT Module
· Manufacturer: Renesas Electronics America
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1503
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UPA2791GR-E2-AT Specification

Sell UPA2791GR-E2-AT, #Renesas Electronics America #UPA2791GR-E2-AT Stock, UPA2791GR-E2-AT Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8; UPA2791GR-E2-AT, #IGBT_Module, #IGBT, #UPA2791GR_E2_AT
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/upa2791gr-e2-at.html

Manufacturer Part Number: UPA2791GR-E2-ATPart Life Cycle Code: TransferredIhs Manufacturer: NEC ELECTRONICS AMERICA INCPackage Description: LEAD FREE, SOP-8Manufacturer: NEC Electronics America IncRisk Rank: 5.72Avalanche Energy Rating (Eas): 2.5 mJConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 5 ADrain-source On Resistance-Max: 0.05 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNEL AND P-CHANNELPulsed Drain Current-Max (IDM): 20 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: TINTerminal Form: GULL WINGTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8

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