#IXYS, #VBO105_14NO7, #IGBT_Module, #IGBT, VBO105-14NO7 Bridge Rectifier Diode, 1 Phase, 107A, 1400V V(RRM), Silicon
Features
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1400 V
• Low forward voltage drop
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power cycling
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1400V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :107A
Collector power dissipation Pc:188W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 5 ±15% N·m
Weight 225g