#IXYS, #VDI25_12P1, #IGBT_Module, #IGBT, VDI25-12P1 Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, ECOPAC-10; VDI25-12P1
Manufacturer Part Number: VDI25-12P1Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X10Pin Count: 10Manufacturer: IXYS CorporationRisk Rank: 5.83Case Connection: ISOLATEDCollector Current-Max (IC): 30 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODE AND THERMISTORJESD-30 Code: R-XUFM-X10JESD-609 Code: e3Number of Elements: 1Number of Terminals: 10Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, ECOPAC-10