#IXYS, #VHF55_12IO7, #IGBT_Module, #IGBT, VHF55-12IO7 Silicon Controlled Rectifier, 41A I(T)RMS, 41000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element,; VHF55-12IO7
Manufacturer Part Number: VHF55-12IO7Pbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPHTS Code: 8541.30.00.80Manufacturer: IXYS CorporationRisk Rank: 5.69Case Connection: ISOLATEDConfiguration: BRIDGE, HALF-CONTROLLED, COMMON CATHODE WITH BUILT-IN DIODEDC Gate Trigger Current-Max: 100 mADC Gate Trigger Voltage-Max: 1.6 VDesc. of Quick-Connects: 2G-2AK-CA-CKDesc. of Screw Terminals: 0Holding Current-Max: 200 mAJESD-30 Code: R-XUFM-D6JESD-609 Code: e4Leakage Current-Max: 5 mANon-Repetitive Pk On-state Cur: 600 ANumber of Elements: 2Number of Terminals: 6On-state Current-Max: 41000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 41 ARepetitive Peak Off-state Voltage: 1200 VRepetitive Peak Reverse Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Finish: Gold (Au) - with Nickel (Ni) barrierTerminal Form: SOLDER LUGTerminal Position: UPPERTime Silicon Controlled Rectifier, 41A I(T)RMS, 41000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element,