#Avago Technologies US Inc., #VMMK_1218_BLKG, #IGBT_Module, #IGBT, VMMK-1218-BLKG RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron M
Manufacturer Part Number: VMMK-1218-BLKGRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Broadcom LTDPackage Description: CHIP CARRIER, R-XBCC-N3ECCN Code: EAR99HTS Code: 8542.33.00.01Manufacturer: Broadcom LimitedRisk Rank: 5.77Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 5 VDrain Current-Max (Abs) (ID): 0.1 ADrain Current-Max (ID): 0.1 AFET Technology: HIGH ELECTRON MOBILITYHighest Frequency Band: KU BANDJESD-30 Code: R-XBCC-N3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: CHIP CARRIERPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 0.3 WPower Gain-Min (Gp): 6.7 dBQualification Status: Not QualifiedSubcategory: FET RF Small SignalSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: NO LEADTerminal Position: BOTTOMTime RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3