#IXYS, #VMO550_01F, #IGBT_Module, #IGBT, VMO550-01F Power Field-Effect Transistor, 590A I(D), 100V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicon
Manufacturer Part Number: VMO550-01FPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.74Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 590 ADrain Current-Max (ID): 590 ADrain-source On Resistance-Max: 0.0021 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2200 WPulsed Drain Current-Max (IDM): 2360 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 590A I(D), 100V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,