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Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

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IXYS VMO550-01F IGBT Module

VMO550-01F

#IXYS, #VMO550_01F, #IGBT_Module, #IGBT, VMO550-01F Power Field-Effect Transistor, 590A I(D), 100V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicon

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: 11+
. Available Qty: 239
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VMO550-01F Specification

Sell VMO550-01F, #IXYS #VMO550-01F Stock, VMO550-01F Power Field-Effect Transistor, 590A I(D), 100V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; VMO550-01F, #IGBT_Module, #IGBT, #VMO550_01F
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/vmo550-01f.html

Manufacturer Part Number: VMO550-01FPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.74Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 590 ADrain Current-Max (ID): 590 ADrain-source On Resistance-Max: 0.0021 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2200 WPulsed Drain Current-Max (IDM): 2360 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 590A I(D), 100V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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