#Microsemi Power Products Group, #VRF141G, #IGBT_Module, #IGBT, VRF141G RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semicondu
Manufacturer Part Number: VRF141GRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-CDFM-F4Pin Count: 4ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.59Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 80 VDrain Current-Max (ID): 40 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: VERY HIGH FREQUENCY BANDJESD-30 Code: R-CDFM-F4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 200 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTransistor Application: AMPLIFIERTransistor Element Material: SILICON RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4