#Vishay, #VS_200MT160K, #IGBT_Module, #IGBT, VS-200MT160K Vishay Semiconductors Three Phase Bridge (Power Module) 200A 1600V;
VS-VS-200MT160K FEATURES
• Package fully compatible with the industry standard INT-A-PAK power modules series
• High thermal conductivity package, electrically insulated case
• Low power loss
• Excellent power volume ratio, outline for easy connections to power transistor and IGBT modules
• 1600 VRMS isolating voltage
• UL E78996 approved
• Designed and qualified for industrial level
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:200A
Collector current Icp:400A
Collector power dissipation Pc:1270W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Vishay Semiconductors Three Phase Bridge (Power Module) 200A 1600V