Vishay Semiconductor Diodes Division VS-SD263C45S50L IGBT Module

Manufacturer Part Number: VS-SD263C45S50LRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: O-CEDB-N2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.75Additional Feature: FREE WHEELING DIODE, SNUBBER DIODEApplication: HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERYConfiguration: SINGLEDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 3.2 VJEDEC-95 Code: DO-200ABJESD-30 Code: O-CEDB-N2Non-rep Pk Forward Current-Max: 5760 ANumber of Elements: 1Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 125 °COperating Temperature-Min: -40 °COutput Current-Max: 375 APackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONPeak Reflow Temperature (Cel): NOT SPECIFIEDRep Pk Reverse Voltage-Max: 4500 VReverse Current-Max: 50000 µAReverse Recovery Time-Max: 5 µsSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTime Rectifier Diode, 1 Phase, 1 Element, 375A, 4500V V(RRM), Silicon, DO-200AB,