#Vishay Semiconductor Diodes Division, #VS_SD800C45L, #IGBT_Module, #IGBT, VS-SD800C45L Rectifier Diode, 1 Phase, 1 Element, 1065A, 4500V V(RRM), Silicon, DO-200AB,; VS-SD800C45L
Manufacturer Part Number: VS-SD800C45LRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: O-CEDB-N2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 2.35Application: HIGH VOLTAGE HIGH POWERConfiguration: SINGLEDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1.95 VJEDEC-95 Code: DO-200ABJESD-30 Code: O-CEDB-N2Non-rep Pk Forward Current-Max: 12800 ANumber of Elements: 1Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -40 °COutput Current-Max: 1065 APackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONPeak Reflow Temperature (Cel): NOT SPECIFIEDRep Pk Reverse Voltage-Max: 4500 VReverse Current-Max: 50000 µASurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTime Rectifier Diode, 1 Phase, 1 Element, 1065A, 4500V V(RRM), Silicon, DO-200AB,