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Vishay Semiconductor Diodes Division VSKT230-12 IGBT Module

VSKT230-12

#Vishay Semiconductor Diodes Division, #VSKT230_12, #IGBT_Module, #IGBT, VSKT230-12 Silicon Controlled Rectifier, 510A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element, MAGN-A-PAK-7; VSKT230-12

· Categories: IGBT Module
· Manufacturer: Vishay Semiconductor Diodes Division
· Price: US$
· Date Code: Contains lead / RoHS non-compliant
. Available Qty: 1063
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VSKT230-12 Specification

Sell VSKT230-12, #Vishay Semiconductor Diodes Division #VSKT230-12 Stock, VSKT230-12 Silicon Controlled Rectifier, 510A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element, MAGN-A-PAK-7; VSKT230-12, #IGBT_Module, #IGBT, #VSKT230_12
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/vskt230-12.html

Manufacturer Part Number: VSKT230-12Part Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SEMICONDUCTORSPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7HTS Code: 8541.30.00.80Manufacturer: Vishay SemiconductorsRisk Rank: 5.74Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTSDC Gate Trigger Current-Max: 200 mAJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 130 °COperating Temperature-Min: -40 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTQualification Status: Not QualifiedRMS On-state Current-Max: 510 ARepetitive Peak Off-state Voltage: 1200 VRepetitive Peak Reverse Voltage: 1200 VSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTrigger Device Type: SCR Silicon Controlled Rectifier, 510A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element, MAGN-A-PAK-7

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