#IXYS, #VUB135_22NO1, #IGBT_Module, #IGBT, VUB135-22NO1 Insulated Gate Bipolar Transistor, 113A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, MODULE-19; VUB135-
Manufacturer Part Number: VUB135-22NO1Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X11Pin Count: 19Manufacturer: IXYS CorporationRisk Rank: 5.71Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 113 ACollector-Emitter Voltage-Max: 1700 VConfiguration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTORJESD-30 Code: R-XUFM-X11JESD-609 Code: e4Number of Elements: 1Number of Terminals: 11Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Gold (Au) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 113A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, MODULE-19