IXYS VUB145-16NOXT IGBT Module

IXYS VUB145-16NOXT is a high-power, fast-switching insulated gate bipolar transistor (IGBT) module, designed for use in various power electronic applications.

VUB145-16NOXT features voltage rating 1600 volts, current rating 145 amperes, & power rating 1400 watts. A low on-state voltage drop and high short-circuit withstand time, suitable for high-performance applications such as motor drives, power supplies, and inverters.

The module(VUB145-16NOXT) is designed with advanced IGBT technology, allows for high efficiency and low power dissipation. It features built-in over-temperature & over-current protection system, preventing damage from overloads or short circuits.

Manufacturer Part Number: VUB145-16NOXT

Features / Advantages:

● Package with DCB ceramic

● Improved temperature and power cycling

● Planar passivated chips

● Very low forward voltage drop

● Very low leakage current

● NTC

● X2PT - 2nd generation Xtreme light Punch Through

● Rugged X2PT design results in:

- short circuit rated for 10 μsec

- very low gate charge

- low EMI

- square RBSOA @ 2x Ic

● Thin wafer technology combined with X2PT design   results in a competitive low VCE(sat) and low    thermal resistance

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:180A

Collector current Icp:360A

Collector power dissipation Pc:500W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

Bridge Rectifier Diode 3 Phase 145A 1600V V(RRM) Silicon