#IXYS, #VUB72_16NO1, #IGBT_Module, #IGBT, Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel
Features:
. Three phase mains rectifier
. Brake chopper:
-IGBT with low saturation voltage
-HiperFRED(TM) free wheeling diode
Application:
. Drives with
-mains input
-DC link
-inverter of chopper feeding the machine
-moto and generator/brake operation
Package
. High level of integration
. Solder terminals for PCB mounting
. UL pending,
. Isolated DCB ceramic base plate
. Large creepage and strike distances
. High reliability
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:56A
Collector current Icp:110A
Collector power dissipation Pc:100W
Collector-Emitter voltage VCES:3600V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting M5 screw torque 2.5~3.5 N·m
Weight Typical value 35g