#IXYS, #VUO28_12NO7, #IGBT_Module, #IGBT, VUO28-12NO7 Bridge Rectifier Diode, 3 Phase, 30A, 120A 1200V V(RRM), Silicon, ROHS COMPLIANT, MODULE-5
Features / Advantages:
●Package with DCB ceramic
●Improved temperature and power cycling
●Planar passivated chips
●Very low forward voltage drop
●Very low leakage current
Applications:
●Diode for main rectification
●For three phase bridge configurations
●Supplies for DC power equipment
●Input rectifiers for PWM inverter
●Battery DC power supplies
●Field supply for DC motors
Package: ECO-PAC1
●Industry standard outline
●RoHS compliant
●Soldering pins for PCB mounting
●Height: 9 mm
●Base plate: DCB ceramic
●Reduced weight
●Advanced power cycling
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :30A
Collector current Icp 1ms Tc=25°C :120A
Collector power dissipation Pc:2500W
Isolation Voltage VIsol (AC 1 minute) :3000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 1.5~2 N·m
Weight 19g