#Diodes Inc, #ZTX855STOA, #IGBT_Module, #IGBT, ZTX855STOA Power Bipolar Transistor, 4A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPAT
Manufacturer Part Number: ZTX855STOAPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPart Package Code: TO-92Package Description: IN-LINE, R-PSIP-W3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: Diodes IncorporatedRisk Rank: 5.18Collector Current-Max (IC): 4 ACollector-Emitter Voltage-Max: 150 VConfiguration: SINGLEDC Current Gain-Min (hFE): 35JESD-30 Code: R-PSIP-W3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: MATTE TINTerminal Form: WIRETerminal Position: SINGLETime Power Bipolar Transistor, 4A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3