#Diodes Inc, #ZXT14P12DXTA, #IGBT_Module, #IGBT, ZXT14P12DXTA Power Bipolar Transistor, 6A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, MO-187AA, Plastic/Epoxy, 8 Pin, M
Manufacturer Part Number: ZXT14P12DXTAPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPart Package Code: TSSOPPackage Description: SMALL OUTLINE, S-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.84Collector Current-Max (IC): 6 ACollector-Emitter Voltage-Max: 12 VConfiguration: SINGLEDC Current Gain-Min (hFE): 75JEDEC-95 Code: MO-187AAJESD-30 Code: S-PDSO-G8Number of Elements: 1Number of Terminals: 8Package Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPolarity/Channel Type: PNPQualification Status: Not QualifiedSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICONTransition Frequency-Nom (fT): 110 MHz Power Bipolar Transistor, 6A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, MO-187AA, Plastic/Epoxy, 8 Pin, MO-187, MSOP-8